MMBD4448 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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MMBD4448

SWITCHING DIODE

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

MMBD4448W

WEJ ELECTRONIC CO.,LTD MMBD4448W SWITCHING DIODE

FEATURES

Power dissipation

PD:

200 mW (Tamb=25℃)

Collector current

IO:

250 mA

Collector-base voltage

VR:

75

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-323

1. 25¡ À0. 05

2. 30¡ À0. 05

Unit: mm

Marking: KA3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reverse recovery time

Symbol

V(BR) R

IR

VF

CD

t rr

Test conditions

IR= 10µA

VR=20V

VR=75V

IF=5mA

IF=10mA

IF=100mA

IF=150mA

VR=0V, f=1MHz

IF=IR=10mA

MIN

MAX

75

0.025

2.5

0.72

0.855

1

1.25

4

4

UNIT

V

µA

V

pF

nS

Irr=0.1×IR ,RL=100Ω

Test period <3000µs.

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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