AUIRFR8405 データシートの表示（PDF） - International Rectifier

部品番号

コンポーネント説明

メーカー

AUIRFR8405

AUTOMOTIVE GRADE

International Rectifier 

AUIRFR/U8405

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

V(BR)DSS

ΔV(BR)DSS/ΔTJ

RDS(on)

VGS(th)

IDSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

RG

Internal Gate Resistance

Min. Typ. Max. Units

Conditions

40

–––

–––

–––

0.03

1.65

–––

–––

1.98

V VGS = 0V, ID = 250μA

d V/°C Reference to 25°C, ID = 5mA

g mΩ VGS = 10V, ID = 90A**

2.2 3.0 3.9 V VDS = VGS, ID = 100μA

––– ––– 1.0

––– ––– 150

μA VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– 2.3 ––– Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

gfs

Forward Transconductance

Qg

Qgs

Qgd

Qsync

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Coss eff. (ER)

Coss eff. (TR)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Qg - Qgd)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

Min. Typ. Max. Units

Conditions

294 ––– –––

––– 103 155

––– 26 –––

––– 38 –––

––– 65 –––

––– 12 –––

––– 80 –––

––– 51 –––

––– 51 –––

––– 5171 –––

––– 770 –––

––– 523 –––

––– 939 –––

––– 1054 –––

S VDS = 10V, ID = 90A**

ID = 90A **

g nC VDS =20V

VGS = 10V

ID = 90A **, VDS =0V, VGS = 10V

VDD = 26V

ns ID = 90A**

g RG = 2.7Ω

VGS = 10V

VGS = 0V

VDS = 25V

pF

ƒ = 1.0 MHz, See Fig. 5

i VGS = 0V, VDS = 0V to 32V

h VGS = 0V, VDS = 0V to 32V

, See Fig. 11

Diode Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Ãd Pulsed Source Current

(Body Diode)

VSD

dv/dt

e Diode Forward Voltage

Peak Diode Recovery

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

Min. Typ. Max. Units

Conditions

™ ––– ––– 211

MOSFET symbol

D

l ––– ––– 804

A showing the

integral reverse

G

––– 0.9 1.3

à g p-n junction diode.

S

V TJ = 25°C, IS = 90A** , VGS = 0V

––– 2.1 ––– V/ns TJ = 175°C, IS = 90A**, VDS = 40V

––– 28 ––– ns TJ = 25°C

––– 29 –––

TJ = 125°C

––– 19 ––– nC TJ = 25°C

––– 20 –––

TJ = 125°C

VR = 34V,

g IF = 90A**

di/dt = 100A/μs

––– 1.1 ––– A TJ = 25°C

Notes:

 Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 100A by source

bonding technology. Note that current limitations arising from heating

of the device leads may occur with some lead mounting arrangements.

(Refer to AN-1140)

‚ Repetitive rating; pulse width limited by max. junction temperature.

ƒ Limited by TJmax, starting TJ = 25°C, L = 0.051mH, RG = 50Ω,

IAS = 90A, VGS =10V. Part not recommended for use above

this value.

„ ISD ≤ 90A, di/dt ≤ 1304A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

… Pulse width ≤ 400μs; duty cycle ≤ 2%.

† Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques

refer to application note #AN-994.

‰ Rθ is measured at TJ approximately 90°C.

Š Pulse drain current is limited by source bonding technology.

** All AC and DC test condition based on old Package

limitation current = 90A.

2

www.irf.com © 2013 International Rectifier

April 30, 2013

Share Link: