MPC8250AVR データシートの表示（PDF） - Freescale Semiconductor

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MPC8250AVR

MPC8250 Hardware Specifications

Freescale Semiconductor 

Electrical and Thermal Characteristics

NOTE: Core, PLL, and I/O Supply Voltages

VDDH, VCCSYN, and VDD must track each other and both must vary in

the same direction—in the positive direction (+5% and +0.1 Vdc) or in the

negative direction (-5% and -0.1 Vdc).

This device contains circuitry protecting against damage due to high static voltage or electrical fields;

however, it is advised that normal precautions be taken to avoid application of any voltages higher than

maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused

inputs are tied to an appropriate logic voltage level (either GND or VCC).

Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the

MPC8280. Note that in PCI mode the I/O interface is different.

4V

GVDD + 5%

VIH

GVDD

GND

VIL GND – 0.3 V

GND – 1.0 V

Not to exceed 10%

of tSDRAM_CLK

Figure 2. Overshoot/Undershoot Voltage

Table 3 shows DC electrical characteristics.

Table 3. DC Electrical Characteristics 1

Characteristic

Input high voltage, all inputs except CLKIN

Input low voltage

CLKIN input high voltage

CLKIN input low voltage

Input leakage current, VIN = VDDH 2

Hi-Z (off state) leakage current, VIN = VDDH2

Signal low input current, VIL = 0.8 V

Signal high input current, VIH = 2.0 V

Output high voltage, IOH = –2 mA

Symbol

VIH

VIL

VIHC

VILC

IIN

IOZ

IL

IH

VOH

Min

2.0

GND

2.4

GND

—

—

—

—

2.4

Max

3.465

0.8

3.465

0.4

10

10

1

1

—

Unit

V

V

V

V

µA

µA

µA

µA

V

MPC8250 Hardware Specifications, Rev. 2

Freescale Semiconductor

7

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