RF2126_07 データシートの表示（PDF） - RF Micro Devices

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RF2126_07

HIGH POWER LINEAR AMPLIFIER

RF Micro Devices 

2

Typical Applications

• 2.5GHz ISM Band Applications

• Digital Communication Systems

• PCS Communication Systems

RF2126

HIGH POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

2

Product Description

The RF2126 is a high-power, high-efficiency, linear ampli-

fier IC. The device is manufactured on an advanced Gal-

lium Arsenide Heterojunction Bipolar Transistor (HBT)

process and has been designed for use as the final RF

amplifier in 2.45 GHz ISM applications such as WLAN

and POS terminals. The part will also function as the final

stage in digital PCS phone transmitters requiring linear

amplification operating between 1800MHz and

2500MHz. The device is packaged in an 8-lead plastic

package with a backside ground. The device is self-con-

tained with the exception of the output matching network

and power supply feed line. It produces a typical output

power level of 1W.

3.90

± 0.10

0.43

± 0.05

-A-

0.05

± 0.05

Exposed

Heat Sink

4.90

± 0.10

1.27

2.70

± 0.10

8° MAX

0° MIN

6.00

± 0.20

Dimensions in mm.

0.22

± 0.03

0.60

± 0.15

1.40

± 0.10

1.70

± 0.10

NOTES:

1. Shaded lead is pin 1.

2. Lead coplanarity - 0.10 with respect to datum "A".

Optimum Technology Matching® Applied

Si BJT

üGaAs HBT

GaAs MESFET

Si Bi-CMOS

SiGe HBT

Si CMOS

RF IN 1

8 RF OUT

RF IN 2

7 RF OUT

PC 3

VCC 4

BIAS

CIRCUIT

6 RF OUT

5 RF OUT

PACKAGE BASE

GND

Functional Block Diagram

Package Style: SOIC-8 Slug

Features

• Single 3V to 6.5V Supply

• 1.3W Output Power

• 12dB Gain

• 45% Efficiency

• Power Down Mode

• 1800MHz to 2500MHz Operation

Ordering Information

RF2126

High Power Linear Amplifier

RF2126 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev A5 010207

2-73

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