KSA642 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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KSA642

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

KSA642

KSA642 TRANSISTOR (PNP)

FEATURES

Power dissipation

D PD:

0.4 W (Tamb=25℃)

T Collector current

.,L ICM:

-0.3 A

Collector-base voltage

V(BR)CBO:

-30 V

Operating and storage junction temperature range

O TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

123

C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

IC Parameter

Symbol

Test conditions

MIN

MAX

Collector-base breakdown voltage

V(BR)CBO

N Collector-emitter breakdown voltage V(BR)CEO

O Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

R Emitter cut-off current

IEBO

T DC current gain *

hFE

C Collector-emitter saturation voltage*

E * Pulse Test: pw≤350µs, duty cycle≤2%.

VCEsat

Ic= -100µA , IE=0

IC=-10 mA , IB=0

IE=-10µA, IC=0

VCB=-25V, IE=0

VCB=-3V, IC=0

VCE=-1 V, IC= -50mA

IC= -0.3A, IB= -30mA

-30

-25

-5

-0.1

-0.1

70

400

-0.6

UNIT

V

V

V

µA

µA

V

L CLASSIFICATION OF hFE

E Rank

WEJRange

O

70-140

Y

120-240

G

200-400

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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