Transistors
2SB0621 (2SB621), 2SB0621A (2SB621A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A)
5.0±0.2
Unit: mm
4.0±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High transition frequency fT
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB0621 VCBO
−30
V
(Emitter open)
2SB0621A
−60
Collector-emitter voltage 2SB0621 VCEO
−25
V
(Base open)
2SB0621A
−50
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−1
A
Peak collector current
ICP
−1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage
2SB0621 VCBO IC = −10 µA, IE = 0
−30
(Emitter open)
2SB0621A
−60
Collector-emitter voltage 2SB0621 VCEO IC = −2 mA, IB = 0
−25
(Base open)
2SB0621A
−50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Forward current transfer ratio
hFE1 * VCE = −10 V, IC = −500 mA
85
340
hFE2 VCE = −5 V, IC = −1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
Base-emitter saturation voltage
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.85 −1.2
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
20 30
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170 120 to 240 170 to 340
Publication date: February 2003
Note) The part numbers in the parenthesis show conventional part number.
SJC00044CED
1