2SC4466L-Y-T3P-T データシートの表示（PDF） - Unisonic Technologies

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2SC4466L-Y-T3P-T

SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

Unisonic Technologies 

2SC4466

Preliminary

NPN EPITAXIAL SILICON TRANSISTO

 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

Collector Current

VEBO

6

V

IC

6

A

Base Current

IB

3

A

Collector Power Dissipation (TC=25°C)

Junction Temperature

Pc

60

W

TJ

150

°C

Storage Temperature

TSTG

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA =25°C)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn-on time

Switching time

Storage time

Fall time

 CLASSIFICATION OF hFE

SYMBOL

TEST CONDITIONS

ICBO VCB=120V

IEBO

VEB=6V

BVCEO

hFE

IC=50mA

VCE=4V, IC=2A

VCE(SAT) IC=2A, IB=0.2A

fT

VCE=12V, IE=-0.5A

Cob VCB=10V, f=1MHz

tON

tS

tF

VCC=30V, RL=10Ω, IC=3A,

IB1=0.3A IB2=0.3A

MIN TYP MAX UNIT

10 µA

10 µA

80

V

50

180

1.5 V

20

MHz

110

pF

0.16

µS

2.60

µS

0.34

µS

RANK

RANGE

O

50~100

P

70~140

Y

90~180

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R214-019.b

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