MPSA45(OLDVer) データシートの表示（PDF） - Unisonic Technologies
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MPSA45 Datasheet PDF : 3 Pages
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UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=400V(MPSA44)
VCEO=350V(MPSA45)
*Collector current up to 300mA
*Complement to MPSA94/93
*Collector Dissipation:
Pc(max)=625mW
APPLICATION
*Telephone switching
*High voltage switch
1
SOT-89
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
V
MPSA44
VCBO
500
MPSA45
400
Collector-emitter voltage
V
MPSA44
VCEO
400
MPSA45
350
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector dissipation(Tc=25°C)
VEBO
Pc
Pc
6
V
625
mW
1.5
W
Collector current
Ic
300
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=100µA,IB=0
MPSA44
500
MPSA45
400
Collector-emitter breakdown voltage BVCEO
Ic=1mA,IB=0
MPSA44
400
MPSA45
350
Emitter-base breakdown voltage
BVEBO
IE=100µA,Ic=0
6
Collector cut-off current
ICBO
MPSA44
VCB=400V,IE=0
MPSA45
VCB=320V,IE=0
Collector cut-off current
ICES
MPSA44
VCE=400V,IB=0
MPSA45
VCE=320V,IB=0
TYP
MAX UNIT
V
V
V
µA
0.1
0.1
µA
0.5
0.5
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-006,A
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