MPSA45(OLDVer) データシートの表示（PDF） - Unisonic Technologies
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MPSA45 Datasheet PDF : 3 Pages
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UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Emitter cut-off current
DC current gain(note)
SYMBOL
IEBO
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Current gain bandwidth product
VBE(sat)
fT
Output capacitance
Cob
Note:Pulse test:PW<300µs,Duty Cycle<2%
TEST CONDITIONS
VEB=4V,Ic=0
VCE=10V,Ic=1mA
VCE=10V,Ic=10mA
VCE=10V,Ic=50mA
VCE=10V,Ic=100mA
Ic=1mA,IB=0.1mA
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
Ic=10mA,IB=1mA
VCE=20V,Ic=10mA,
f=100MHz
VCB=20V,IE=0
f=1MHz
MIN TYP MAX UNIT
0.1 µA
40
50
240
45
40
0.4
V
0.5
0.75
0.75 V
50
MHz
7
pF
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
140
120
100
VCE=10V
80
60
40
20
0
-20
-40
100
101
102
103
104
Ic,Collector current(mA)
Fig.2 Turn-on switching times
101
VCE=150V
Ic/IB=10
Ta=25°C
VBE(OFF)=4V
100
Tf
10-1
100
Td
101
102
Ic,Collector current(mA)
Fig.3 Turn-off switching times
102
VCE=150V
Ic/IB=10
Ta=25°C
1
10
Ts
100
Tf
10-1
100
101
102
Ic,Collector current(mA)
Fig.4 Capacitance
103
2
10
Cib
101
Cob
100
-1
10
0
1
2
3
10
10
10
10
Collector voltage(V)
Fig.5 ON Voltage
1.0
Ta=25°
0.8
C
VBE(sat),Ic/IB=10
0.6
VBE(ON),VCE=10V
0.4
0.2
VCE(sat),Ic/IB=10
0
-1
10
0
1
2
3
10
10
10
10
Ic,Collector current(mA)
Fig.6 Collector saturation region
0.5
0.4
Ic=1mA
Ic=10mA
0.3
Ic=50mA
0.2
0.1
Ta=25°
0
C
1
2
3
10
10
10
4
5
10
10
Ib, base current(µA)
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R208-006,A
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