2SB1182 データシートの表示（PDF） - Weitron Technology
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2SB1182 Datasheet PDF : 5 Pages
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2SB1182
Typical Characteristics
−1000 Ta=100°C
−500
25°C
−40°C
−200
−100
−50
VCE= −3V
−20
−10
−5
−2
−1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25°C
VCE= −6V
−3V
−1V
200
100
50
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector curren ( )
−500 Ta=25°C
−200
−100
IC/IB=50
−50
20
10
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
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−0.5
Ta=25°C −2.5mA
−0.4
−0.3
−0.2
−2.25mA
−2mA
−1.75mA
−1.5mA
−1.25mA
−1mA
−750µA
−500µA
−0.1
−250µA
0
IB=0A
0
−0.4 −0.8 −1.2 −1.6
−2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
500
Ta=100°C
25°C
−25°C
200
VCE= −3V
100
50
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( )
−500 lC/lB=10
−200
−100
Ta=100°C
25°C
−40°C
−50
−20
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
30-Nov-07
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