C1358 データシートの表示（PDF） - Inchange Semiconductor
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C1358 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES
Collector cut-off current
VCE=1400V; VBE=0
ICBO
Collector cut-off current
VCB=1000V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=15V
hFE-2
DC current gain
IC=3A ; VCE=15V
tstg
Storage time
tf
Fall time
IC=4A; IB1=-IB2=1.0A
PW=20μs
Product Specification
2SC1358
MIN TYP. MAX UNIT
500
V
10
V
1.2
V
1.0
mA
20
μA
200
μA
10
45
5
35
10
μs
1.0
μs
2
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