BCV47(2001) データシートの表示（PDF） - Infineon Technologies

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BCV47
(Rev.:2001)

NPN Silicon Darlington Transistors

Infineon Technologies 

BCV27, BCV47

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V (BR)CEO

IC = 10 mA, IB = 0

BCV27

30

-

BCV47

60

-

V

-

-

Collector-base breakdown voltage

V (BR)CBO

IC = 100 µA, IB = 0

BCV27

40

-

-

BCV47

80

-

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

VCB = 60 V, IE = 0

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

VCB = 60 V, IE = 0 , TA = 150 °C

Emitter cutoff current

VEB = 4 V, IC = 0

DC current gain 1)

IC = 100 µA, VCE = 1 V

BCV27

BCV47

BCV27

BCV47

BCV27

BCV47

V(BR)EBO 10

-

I CBO

I CBO

I EBO

-

-

-

-

-

-

-

-

-

-

hFE

4000 -

2000 -

-

nA

100

100

µA

10

10

100 nA

-

-

-

DC current gain 1)

IC = 10 mA, VCE = 5 V

hFE

BCV27

10000 -

-

BCV47

4000 -

-

DC current gain 1)

IC = 100 mA, VCE = 5 V

hFE

BCV27

20000 -

-

BCV47

10000 -

-

DC current gain 1)

IC = 0.5 A, VCE = 5 V

hFE

BCV27

4000 -

-

BCV47

2000 -

-

1) Pulse test: t ≤ 300µs, D = 2%

2

Jul-12-2001

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