INA-03184 データシートの表示（PDF） - HP => Agilent Technologies
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INA-03184 Datasheet PDF : 4 Pages
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INA-03184 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2]
RF Input Power
Junction Temperature
Storage Temperature
25 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance:
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/°C for TC > 130°C.
INA-03184 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 10 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 1.5 GHz
∆GP
f3 dB
ISO
Gain Flatness
3 dB Bandwidth[2]
Reverse Isolation (|S12| 2)
f = 0.1 to 2.0 GHz
f = 1.5 GHz
VSWR
Input VSWR
Output VSWR
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
NF
50 Ω Noise Figure
f = 1.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.5 GHz
IP3
Third Order Intercept Point
f = 1.5 GHz
tD
Group Delay
f = 1.5 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min. Typ. Max.
dB 23.0 25.0
dB
± 0.8
GHz
2.5
dB
35
2.0:1
3.0:1[3]
dB
2.6
dBm
–2.0
dBm
7
psec
210
V
3.0 4.0 5.0
mV/°C
+4
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (GP).
3. VSWR can be improved by bypassing a 100–200 Ω bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-03184-TR1
1000
7" Reel
INA-03184-BLK
100
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-109
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