BYT56A データシートの表示（PDF） - Galaxy Semi-Conductor
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BYT56A Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
BYT56A(Z)--- BYT56M(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
PULSE
GENERATOR
(NOTE2)
(-)
+0.5A
0
-0.25A
-1.0A
trr
1cm
NOTES:1.RISETIME=7ns MAX.INPUTIMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.source IMPEDANCE=50Ω.
SET TIMEBASEFOR20/30 ns/cm
FIG.2 -- TYPICAL JUNCTION CAPACTTANCE
200
100
70
50
BYT56J - BYT56M
BYT56A - BYT56G
10
TJ=25
1 .1 .2 .4
1.0 2
140 2 0 4 0
100
REVERSE VOLTAGE,VOLTS
FIG.4 -- TYPICAL FORWARD CURRENT
DERATING CURVE
6
5
S igle phase half
wave 60 Hz
R esistive or
4
Inductive load
3
2
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE( )
FIG.3 --PEAK FORWARD SURGE CURRENT
200
150
TJ=25
8.3 m s Single half sine wave
100
50
01
10
100
1000
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300 s
1
0.1
0.01
0.4 0.6
1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Document Number 026025
BL GALAXY ELECTRICAL
www.galaxycn.com
2.
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