MGF7169C データシートの表示（PDF） - MITSUBISHI ELECTRIC

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MGF7169C

UHF BAND GaAs POWER AMPLIFIER

MITSUBISHI ELECTRIC  

Preliminary

information

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Ratings Unit

Vd1,Vd2 Drain supply voltage

6

V

Vg

Gate supply voltage

-4

V

Pi

Input power

15

dBm

Tc(op) Operating case temperature -30 ~ +85 ˚C

Tstg

Storage temperature

-30 ~ +100 ˚C

*1.Each maximum rating is guaranteed independently.

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Symbol

Parameter

Test conditions

Limits

Unit

MIN TYP MAX

f

frequency

1850 — 1910 MHz

ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

— 450 —

Idt

Total drain current

Idle_Id Idle current

Pout

Ig

2sp

rin

Output power

Gate current

2nd harmonics

input VSWR

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V

Vg1=Vg2=-2.0V, Po=28dBm

Vg1=Vg2=-2.5V, Po=12dBm

Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V,

Pin=7dBm CDMA modulated signal

based on IS-95 STD.

(1.2288Mbps spreading,OQPSK)

— 480 —

mA

— 520 —

— 450 —

— 150 —

mA

— 50 —

— 28 — dBm

— — -3 mA

— — -30 dBc

—— 3—

Vd1=Vd2=3.0V,

—

Damage

with-standing

Pin=7dBm,

Load VSWR=10, All phase

Note Time=10 sec

No damage

Vd1=Vd2=3.0V,

—

Stability

Pin=7dBm,

Note Load VSWR=3:1, All phase

No oscillation

Spurious level≤-60dBc

*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.

Electrical characteristics are changed by the external matching circuit.

Limits are guaranteed by using MITSUBISHI test fixture.

Note : Sampling inspection

MITSUBISHI ELECTRIC

(2/20)

Aug. '97

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