PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7175C
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C)
Symbol
Parameter
Ratings Unit
VD1,VD2,VD3
VD_NVG
VT,VGC
Pin
Tc(op)
Tstg
Supply voltage of HPA
5
Supply voltage of NVG
5
Control voltage
4.5
Input power
5
Operating case temperature -30 ~ +85
Storage temperature
-30 ~ +100
V
V
V
dBm
deg.C
deg.C
*1.Each maximum rating is guaranteed independently.
ELECTRICAL CHARACTERISTICS (Ta=25 deg.C)
*Standard bias : VD1,VD2,VD3=3V
VD_NVG,VD_LEV=3V
Symbol
Parameter
f
frequency
Idt
Total drain current
Test conditions
Standard bias*,VGC=VT=3.0V,
Pout=28dBm
ACP<-46dBc (1.25MHz off-set.)
Limits
Unit
MIN TYP MAX
1850 – 1910 MHz
– 560 – mA
Ga
Gain
Idle_Id Idle current
Pout
Ig
2sp
Output power
Gate current
2nd harmonics
Standard bias*,VT=3.0V,VGC=3.0V,
Standard bias*,VT=3.0V,VGC=0.0V,
Standard bias*,VGC=3V,VT=3V, for Po>10dBm
Standard bias*,VGC=3V,VT=2V, for Po<12dBm
Standard bias*,VGC=VT=3V
CDMA modulated signal based on IS-9
5 STD.
(1.2288Mbps spreading,OQPSK)
rin
ACP
Psp
input VSWR
Adjacent channel leakage
Spurious level
Po=28dBm,1.2288MHz Spreading
@1.25MHz offset
Standard bias*,VGC=VT=3.0V
28
18
– 170
– 50
– 28
–
5
dB
dB
–
mA
–
– dBm
– mA
–
– -30 dBc
– – 3–
–
– -46 dBc
–
– -57 dBm
Pnoise
Noise power in
1.93~1.99GHz band
Standard bias*,VGC=VT=3.0V,
Resolution band width = 1MHz
–
– -70 dBm
–
Damage
with-standing
Note
–
Stability
Note
Standard bias*,VGC=VT=3.0V,
Pin=0dBm, Load VSWR=10, All phase,
Time=10 sec
Standard bias*,VGC=VT=3.0V,
Pin=0dBm, Load VSWR=3:1, All phase
No damage
No oscillation
Spurious level≤-60dBc
*CDMA is code division multiple access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
Note : Sampling inspection
MITSUBISHI
ELECTRIC
as of Mar.'98