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MCR101-4_ データシートの表示(PDF) - Unisonic Technologies

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MCR101-4_ Datasheet PDF : 4 Pages
1 2 3 4
UTC MCR101
SCR
PARAMETER
Circuit Fusing Considerations
SYMBOL
I2t
MAX
0.415
UNIT
A2s
(t=8.3 ms)
Forward Peak Gate Power
PGM
0.1
W
(TA=25°C, Pulse Width 1.0µs)
Forward Average Gate Power
PG(AV)
0.1
W
(TA=25°C, t=8.3ms)
Peak Gate Current – Forward
IGM
1
A
(TA=25°C, Pulse Width1.0µs)
Peak Gate Voltage – Reverse
VGRM
5
V
(TA=25°C, Pulse Width1.0µs)
Operating Junction Temperature Range @ Rated VRRM and
VDRM
Storage Temperature Range
TJ
-40 to +110
°C
Tstg
-40 to +150
°C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER
TEST CONDITION
SYMBOL
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current
Tc=25°C
VD=Rated VDRM and VRRM; RGK=1kIDRM, IRRM
Tc=125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
ITM=1A Peak @ TA=25°C
VTM
Gate Trigger Current (Continuous
VAK=7Vdc, RL=100, TC=25°C
IGT
dc)(note2)
Holding Current (note 3) Tc=25 °C VAK=7Vdc, initiating current=20mA
IH
Tc=-40 °C
Latch Current
Tc=25 °C
VAK=7V, Ig=200µA
IL
Tc=-40 °C
Gate Trigger Current
VAK=7Vdc, RL=100
VGT
(continuous dc) (Note 2) Tc=25 °C
Tc=-40 °C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of On-State
Current
VD=Rated VDRM, Exponential
Waveform, RGK=1000, TJ=110°C
IPK=20A; Pw=10µsec;
diG/dt=1A/µsec, Igt=20mA
dV/dt
di/dt
MIN TYP MAX UNIT
10 µA
100 µA
1.7 V
40 200 µA
0.5 5 mA
10
0.6 10 mA
15
V
0.62 0.8
1.2
20 35
V/µs
50 A/µs
Notes: 1. Indicates Pulse Test Width1.0ms, duty cycle 1%
2. RGK=1000included in measurement.
3. Does not include RGK in measurement.
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R301-009,B

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