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AUIRFR4105Z データシートの表示(PDF) - Kersemi Electronic Co., Ltd.

部品番号
コンポーネント説明
メーカー
AUIRFR4105Z
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
AUIRFR4105Z Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AUTOMOTIVE GRADE
AUIRFR4105Z
AUIRFU4105Z
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
G
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
V(BR)DSS
55V
RDS(on) max. 24.5m
S
ID
30A
D
S
G
D-Pak
AUIRFR4105Z
S
D
I-Pak G
AUIRFU4105Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
j Junction-to-Case
RθJA
i Junction-to-Ambient (PCB mount)
RθJA
Junction-to-Ambient
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
3.12
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.kersemi.com
1
07/23/2010

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