MGP11N60E_D データシートの表示（PDF） - Motorola => Freescale
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MGP11N60E_D Datasheet PDF : 6 Pages
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25
TJ = 25°C
20
20 V
17.5 V
15 V
12.5 V
15
VGE = 10 V
10
5.0
0
0
2.0
4.0
6.0
8.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
MGP11N60E
25
20 V
15 V
17.5 V
20
12.5 V
15
VGE = 10 V
10
0.5
0
0
TJ = 125°C
2.0
4.0
6.0
8.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
24
20
VCE = 100 V
5 ms PULSE WIDTH
16
2.25
VGE = 15 V
80 ms PULSE WIDTH
2.05
IC = 8.0 A
12
1.85
6.0 A
8.0
TJ = 125°C
4.0
25°C
1.65
4.0 A
0
1.45
5.0
7.0
9.0
11
13
15
17
–50 –25 0 25 50 75 100 125 150
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
1600
TJ = 25°C
VGE = 0 V
Cies
800
Coes
Cres
0
0
5.0
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
20
16
QT
12
Q1
Q2
8.0
4.0
TJ = 25°C
VCC = 300 V
IC = 8.0 A
0
0
10
20
30
40
50
QG, TOTAL GATE CHARGE (nC)
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
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