2SC4617 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC4617 Datasheet PDF : 4 Pages
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Production specification
NPN general purpose Transistor
2SC4617
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
50
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=1.0mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.5 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
CLASSIFICATION OF HFE
RANK
Q
RANGE
120-270
MARKING
BQ
VEB=4V,IC=0
0.5 μA
VCE=6V,IC=1mA
120
560
IC=60mA, IB=5.0mA
0.4 V
VCE=12V,
IC=2.0mA,f=30MHz
VCB=12V, IC=0,f=1MHz
180
MHz
2.0 Pf
R
180-390
BR
S
270-560
BS
H006
Rev.A
www.gmicroelec.com
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