STD7N80K5 データシートの表示（PDF） - STMicroelectronics

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STD7N80K5

N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD7N80K5, STP7N80K5, STU7N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID

ID

IDM (1)

PTOT

IAR

EAS

dv/dt (2)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax)

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Peak diode recovery voltage slope

Tj

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

± 30

6

3.8

24

110

2

88

4.5

-55 to 150

Unit

V

A

A

A

W

A

mJ

V/ns

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-amb max

Rthj-pcb(1) Thermal resistance junction-pcb max

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

DPAK

50

Value

TO-220

1.14

62.5

IPAK

100

Unit

°C/W

°C/W

°C/W

DocID023448 Rev 5

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