SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1880
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO
Collector cut-off current
VCB=800V ;IE=0
IEBO
Emitter cut-off current
VEB=4V ;IC=0
ICES
Collector cut-off current
VCE=1500V
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
VF
Diode forward voltage
tf
Fall time
IEC=8A
IC=6A;RL=33.3@
IB1=1.2A IB2=-2.4A;VCC=200V
MIN TYP. MAX UNIT
800
V
5
V
1.5
V
10
µA
40
130 mA
1.0
mA
8
5
10
2
V
0.1
0.3
µs
2