MJD210 データシートの表示（PDF） - Inchange Semiconductor

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MJD210

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

MJD210

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0

-25

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA

-0.3

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A ;IB= -0.2A

-0.75

V

VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A ;IB= -1A

-1.8

V

VBE(sat) Base-Emitter Saturation Voltage

IC= -5A ;IB= -1A

-2.5

V

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= -2A; VCE= -1V

VCB= -40V; IE= 0

VCB= -40V; IE= 0;TC= 125℃

VEB= -8V; IC= 0

-1.6

V

-0.1

μA

-0.1

mA

-0.1

μA

hFE-1

DC Current Gain

IC= -0.5 A ; VCE= -1V

70

hFE-2

DC Current Gain

IC= -2A ; VCE= -1V

45

180

hFE-3

DC Current Gain

IC= -5A ; VCE= -2V

10

fT

Current-Gain—Bandwidth Product IC= -0.1 A; VCE= -10V; ftest = 10MHz 65

MHz

COB

Collector Capacitance

IE= 0; VCB= -10V; ftest = 0.1MHz

60

pF

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