MJD210_ データシートの表示（PDF） - Unisonic Technologies
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MJD210_ Datasheet PDF : 5 Pages
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UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Sustaining
VCEO(sus)
IC=10mA, IB=0
25
Voltage (note 1)
Collector Cutoff Current
ICBO
VCB=40V, IE=0
-
VCB=40V, IE=0, TJ=125°C
-
Emitter Cutoff Current
IEBO
VBE=7V, Ic=0
-
ON CHARACTERISTICS
DC Current Gain (note 2)
hFE
IC=500mA, VCE=1V
70
IC=2A, VCE=1V
45
IC=5A, VCE=2V
10
Collector-Emitter Saturation
VCE(sat)
IC=500mA, IB=50mA
-
Voltage (note 2)
IC=2A, IB=200mA
-
IC=5A, IB=1A
-
Base-Emitter Saturation Voltage
VBE(sat)
IC=5A, IB=1A
-
(note 1)
Base-Emitter On Voltage (note 1) VBE(on)
IC=2A, VCE=1V
-
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
IC=100mA, VCE=10V,
65
(note 3)
ftest = 10MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=0.1MHz
-
*When surface mounted on minimum pad sizes recommended.
NOTE 1: Pulse Test: Pulse Width = 300µs, Duty Cycle ≈ 2%.
(continued)
NOTE 2: Pulse Test: Pulse Width = 300µs, Duty Cycle ≈ 2%.
NOTE 3: fT =｜hfe｜·ftest.
MAX
-
100
100
100
-
180
-
0.3
0.75
1.8
2.5
1.6
120
UNIT
V
nA
nA
nA
V
V
V
MHz
pF
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R213-001,A
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