7N60-TF3-T データシートの表示（PDF） - Unisonic Technologies
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7N60-TF3-T Datasheet PDF : 7 Pages
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7N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.4
A
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
7.4
4.7
A
A
Pulsed Drain Current (Note 1)
IDM
29.6
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
580
mJ
Avalanche Energy, Repetitive Limited by TJ(MAX)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25℃)
Derate above 25℃
142
W
PD
1.14
W/℃
Junction Temperature
Operating and Storage Temperature
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
PARAMETER
SYMBOL
θJA
θJC
θCS
MIN
TYP
0.5
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
MAX
62.5
0.88
UNIT
°C/W
°C/W
°C/W
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS VGS = 0V, ID = 250µA
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
IGSSF VGS = 30V, VDS = 0V
IGSSR VGS = -30V, VDS = 0V
△BVDSS/ ID = 250µA, Referenced to
△TJ 25°C
600
V
10 µA
100 µA
100 nA
-100 nA
0.67
V/℃
VGS(TH) VDS = VGS, ID = 250µA
2.0
4.0 V
RDS(ON) VGS = 10V, ID = 3.7A
1.0 Ω
gFS VDS = 50V, ID = 3.7A (Note 4)
6.4
S
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
1400 pF
180 pF
21 pF
td(ON)
tR
td(OFF)
tF
QG
QGS
QGD
VDD =300V, ID =7.4A, RG =25Ω
(Note 4, 5)
VDS=480V, ID=7.4A, VGS=10 V
(Note 4, 5)
70 ns
170 ns
140 ns
130 ns
29 38 nC
7
nC
14.5
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-076,B
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