STL57N65M5 データシートの表示（PDF） - STMicroelectronics

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STL57N65M5

N-channel 650 V, 0.061 Ω typ., 22.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL57N65M5

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage

VGS

ID (1)

ID (1)

IDM (1),(2)

ID(3)

ID(3)

PTOT (3)

PTOT (1)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Drain current (continuous) at Tamb = 25 °C

Drain current (continuous) at Tamb = 100 °C

Total dissipation at Tamb = 25 °C

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

dv/dt (4)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

Tstg Storage temperature

Tj Max. operating junction temperature

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area.

3. When mounted on FR-4 board of inch², 2oz Cu.

4. ISD ≤ 22.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD=400 V

Table 3.

Symbol

Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb(1) Thermal resistance junction-ambient max

1. When mounted on FR-4 board of inch², 2oz Cu.

Electrical ratings

Value

Unit

650

V

± 25

V

22.5

A

22

A

90

A

4.3

A

2.7

A

2.8

W

189

W

9

A

960

mJ

15

V/ns

- 55 to 150

°C

150

°C

Value

0.66

45

Unit

°C/W

°C/W

Doc ID 022996 Rev 2

3/16

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