2SA1577Q_09 データシートの表示（PDF） - ROHM Semiconductor

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2SA1577Q_09

Medium Power Transistor (-32V, -05A)

ROHM Semiconductor 

Medium Power Transistor (-32V, -05A)

2SA1577

Features

1) Large IC.

ICMAX. = -500mA

2) Low VCE(sat). Ideal for low-voltage operation.

3) Complements the 2SC4097.

Structure

Epitaxial planer type

PNP silicon transistor

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

IC

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

∗PC MAX. must not be exceeded.

Tstg

Limits

−40

−32

−5

−0.5

0.2

150

−55 to +150

Unit

V

V

V

A∗

W

°C

°C

Dimensions (Unit : mm)

2SA1577

2.0±0.2

1.3±0.1

0.65 0.65

(1) (2)

0.9±0.1

0.2 0.7±0.1

(3)

0.3

+0.1

−0

All terminals have

same dimensions

0∼0.1

0.15±0.05

(1) Emitter

ROHM : UMT3

(2) Base

EIAJ : SC-70

(3) Collector

∗ Abbreviated symbol: H

∗ Denotes hFE

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −40

Collector-emitter breakdown voltage BVCEO −32

Emitter-base breakdown voltage

BVEBO −5

Collector outoff current

ICBO

−

Rmitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

200

7

Max.

−

−

−

−1

−1

−0.6

390

−

−

Unit

V

V

V

μA

μA

V

−

MHz

pF

Conditions

IC= −100μA

IC= −1mA

IE= −100μA

VCB= −20V

VEB= −4V

IC/IB= −300mA/−30mA

VCE= −3V, IC= −100mA

VCE= −5V, IE=20mA, f=100MHz

VCB= −10V, IE=0A, f=1MHz

Packaging specifications

Package

Code

Type

hFE Basic ordering unit (pieces)

2SA1577 QR

Taping

T106

3000

hFE values are classifies as follows.

Item

Q

R

hFE

120 to 270 180 to 390

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.B

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