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P4SMA11A データシートの表示(PDF) - Shanghai Semitech Semiconductor Co., Ltd

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P4SMA11A
SEMITECH
Shanghai Semitech Semiconductor Co., Ltd SEMITECH
P4SMA11A Datasheet PDF : 5 Pages
1 2 3 4 5
P4SMA Series
Type Number
(Uni)
P4SMA200A
P4SMA220A
P4SMA250A
P4SMA300A
P4SMA350A
P4SMA400A
P4SMA440A
P4SMA480A
P4SMA510A
P4SMA530A
P4SMA540A
P4SMA550A
(Bi)
P4SMA200CA
P4SMA220CA
P4SMA250CA
P4SMA300CA
P4SMA350CA
P4SMA400CA
P4SMA440CA
P4SMA480CA
P4SMA510CA
P4SMA530CA
P4SMA540CA
P4SMA550CA
Reverse
Stand-Off
Voltage
Breakdown Breakdown
Voltage
Voltage
Min. @IT Max. @ IT
Test
Current
VRMW(V)
171.00
VBR MIN(V)
190.00
VBR MAX(V)
210.00
IT (mA)
1
185.00
209.00
231.00
1
214.00
237.00
263.00
1
256.00
285.00
315.00
1
300.00
332.00
368.00
1
342.00
380.00
420.00
1
376.00
418.00
462.00
1
408.00
456.00
504.00
1
434.00
485.00
535.00
1
451.00
503.50
556.50
1
460.00
513.00
567.00
1
468.00
522.50
577.50
1
Maximum
Clamping
Voltage
@IPP
VC(V)
Peak
Pulse
Current
IPP(A)
274.0
1.5
328.0
1.3
344.0
1.2
414.0
1.0
482.0
0.9
548.0
0.8
602.0
0.7
658.0
0.6
698.0
0.6
725.0
0.6
740.0
0.5
760.0
0.5
Reverse
Leakage
@VRMW
IR(uA)
1
1
1
1
1
1
1
1
1
1
1
1
For Bi-directional type having VRWM of 10 Volts and less, the IR limit is double
For parts without A, the VBR is ± 10% and VC is 5% higher than with A parts.
I-V Curve Characteristics
Bi-
directional
Uni-
directional
PPPM
VRWM
VBR
VC
IR
VF
Peak Pulse Power Dissipation - Max power dissipation
Reverse Stand-off Voltage - Maximum voltage that can be applied to TVS without operation
Breakdown Voltage – Maximum voltage that flows though the TVS at a specified current (IT)
Clamping Voltage – Peak voltage measured across the TVS at a specified IPPM (peak impulse current)
Reverse Leakage Current – Current measured at VR
Forward Voltage Drop for Uni-directional
Rev. 2.0, 10-Nov.-16
WWW.SEMITECH.CN

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