HGTG30N60A4 データシートの表示（PDF） - Fairchild Semiconductor
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HGTG30N60A4 Datasheet PDF : 9 Pages
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HGTG30N60A4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . TPKG
Ratings
600
75
60
240
20
30
150 A at 600 V
463
3.7
-55 to 150
300
260
UNIT
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250 A, VGE = 0 V
IC = -10 mA, VGE = 0 V
VCE = 600 V
TJ = 25oC
TJ = 125oC
IC = 30 A,
VGE = 15 V
TJ = 25oC
TJ = 125oC
IC = 250 A, VCE = 600 V
VGE = 20 V
TJ = 150oC, RG = 3 VGE = 15 V
L = 100 H, VCE = 600 V
IC = 30 A, VCE = 300 V
IC = 30 A,
VCE = 300 V
VGE = 15 V
VGE = 20 V
IGBT and Diode at TJ = 25oC
ICE = 30 A
VCE = 390 V
VGE =15 V
RG = 3
L = 200 H
Test Circuit - (Figure 20)
MIN
TYP
MAX
UNIT
600
-
-
V
20
-
-
V
-
-
250
A
-
-
4.0
mA
-
1.8
2.6
V
-
1.6
2.0
V
4.5
5.2
7.0
V
-
-
250
nA
150
-
-
A
-
8.5
-
V
-
225
270
nC
-
300
360
nC
-
25
-
ns
-
12
-
ns
-
150
-
ns
-
38
-
ns
-
280
-
J
-
600
-
J
-
240
350
J
©2005 Fairchild Semiconductor Corporation
2
HGTG30N60A4 Rev. C1
www.fairchildsemi.com
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