2SA1386A データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SA1386A Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SA1386 2SA1386A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1386
2SA1386A
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
ICBO
Collector cut-off
Current
2SA1386 VCB=-160V; IE=0
2SA1386A VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=-2A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=4Ω
IB1=-IB2=-1A
VCC=40V
hFE Classifications
O
P
Y
50-100 70-140 90-180
MIN TYP. MAX UNIT
-160
V
-180
-2.0
V
-100 μA
-100 μA
50
180
500
pF
40
MHz
0.30
μs
0.70
μs
0.20
μs
2
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