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BD9104FVM-TR_09 データシートの表示(PDF) - ROHM Semiconductor

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BD9104FVM-TR_09 Datasheet PDF : 18 Pages
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BD9102FVM, BD9104FVM, BD9106FVM
Technical Note
BD9106FVM(Ta=25,VCC=5V,EN=VCC,R1=20k,R2=10kunless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Max.
Standby current
ISTB
-
0
10
Bias current
ICC
-
250
400
EN Low voltage
VENL
-
GND
0.8
EN High voltage
VENH
2.0
VCC
-
EN input current
IEN
-
1
10
Oscillation frequency
Pch FET ON resistance *5
Nch FET ON resistance *5
FOSC
RONP
RONN
0.8
1
1.2
-
0.35
0.60
-
0.25
0.50
ADJ reference voltage
VADJ
0.780
0.800
0.820
Output voltage
VOUT
-
1.200
-
ITH SInk current
ITHSI
10
20
-
ITH Source Current
ITHSO
10
20
-
UVLO threshold voltage
VUVLOTh
3.2
3.4
3.6
UVLO hysteresis voltage
VUVLOHys
50
100
200
Soft start time
TSS
1.5
3
6
Timer latch time
TLATCH
0.5
1
2
*5 Design GuaranteeOutgoing inspection is not done on all products
Unit
μA
μA
V
V
μA
MHz
V
V
μA
μA
V
mV
ms
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
ADJ=H
ADJ=L
VCC=HL
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© 2009 ROHM Co., Ltd. All rights reserved.
3/17
2009.05 - Rev.A

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