MPSA92M(Old_V) データシートの表示（PDF） - Unisonic Technologies
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MPSA92M Datasheet PDF : 2 Pages
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UTCMPSA92M PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=-300V
*Collector Dissipation:
Pc(max)=625mW
*Low collector-Emitter saturation voltage
APPLICATIONS
*Telephone switching
*High voltage switch
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
-300
V
Collector-emitter voltage
VCEO
-300
V
Emitter-base voltage
VEBO
-6
V
Collector dissipation(Ta=25°C)
Pc
625
mW
Collector current
Ic
-800
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA,IE=0
-300
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-300
Collector-emitter breakdown voltage BVCES
Ic=-100µA,VBE=0
-300
Emitter-base breakdown voltage
BVEBO
IE=-100µA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-300V,IE=0
Collector cut-off current
ICES
VCB=-300V,VBE=0
Emitter cut-off current
IEBO
VEB=-4V,Ic=0
DC current gain(note)
hFE
VCE=-10V,Ic=-1mA
60
VCE=-10V,Ic=-10mA
80
VCE=-10V,Ic=-100mA
80
VCE=-10V,Ic=-200mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-30mA,IB=-1mA
Ic=-100mA,IB=-10mA
Base-emitter saturation voltage
VBE(sat)
Ic=-10mA,IB=-1mA
Output capacitance
Cob
VCB=-20V,IE=0, f=1MHz
Note:Pulse test:PW<300µs,Duty Cycle<2%
TYP
MAX
-100
-1
100
300
-0.20
-0.7
-0.75
8
UNIT
V
V
V
V
nA
µA
nA
V
V
pF
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-020,A
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