BZX55B68 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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BZX55B68 Datasheet PDF : 5 Pages
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RoHS
BZX55C2V0-BZX55C75
Zener diode TD Features
.,L High reliability
O Applications
Voltage stabilization
C Construction
IC Silicon epitaxial planar
N Absolute Maximum Ratings
RO Tj=25℃
Parameter
Power dissipation
T Z-current
Junction temperature
C Storage temperature range
Test Conditions
I=4mm TL≤25℃
Type
Symbol
Value
Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
℃
Tstg
-65~+175
℃
E Maximum Thermal Resistance
L Tj=25℃
E Parameter
Junction ambient
Test Conditions
I=4mm TL=constant
Symbol
RthJA
Value
350
Unit
K/W
J Electrical Characteristics
ETj=25℃
W Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Forward voltage
IF=200mA
VF
1.5 V
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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