BCV29 データシートの表示（PDF） - Infineon Technologies

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BCV29

NPN Silicon Darlington Transistors

Infineon Technologies 

NPN Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV28, BCV48 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BCV29, BCV49

1

2

3

2

Type

BCV29

BCV49

Marking

EF

EG

Maximum Ratings

Parameter

Collector-emitter voltage

BCV29

BCV49

Collector-base voltage

BCV29

BCV49

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Peak base current

Total power dissipation-

TS ≤ 130 °C

Junction temperature

Storage temperature

Pin Configuration

1=B

2=C

3=E

1=B

2=C

3=E

Package

SOT89

SOT89

Symbol

VCEO

VCBO

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

Value

Unit

V

30

60

40

80

10

500

mA

800

100

200

1

W

150

°C

-65 ... 150

1

2011-10-05

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