FDD6612A データシートの表示（PDF） - Fairchild Semiconductor
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FDD6612A Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 9.5A
8
6
VDS = 10V
20V
15V
4
2
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
1000
800
600
Ciss
f = 1 MHz
VGS = 0 V
400
Coss
200
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
RθJA = 96oC/W
40
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 96oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6612A/FDU6612A Rev. E(W)
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