RoHS
MPSA93
MPSA93 TRANSISTOR (PNP)
D FEATURES
T Power dissipation
.,L PCM:
0.625 W (Tamb=25℃)
Collector current
ICM:
-0.5
A
O Collector-base voltage
V(BR)CBO:
-200 V
C Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N Parameter
Collector-base breakdown voltage
O Collector-emitter breakdown voltage
R Emitter-base breakdown voltage
T Collector cut-off current
C Emitter cut-off current
E DC current gain
EL Collector-emitter saturation voltage
Base-emitter saturation voltage
J Transition frequency
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat) *
VBE(sat) *
fT
Test conditions
Ic= -100µA, IE=0
IC= -1mA , IB=0
IE= -100µA, IC=0
VCB= -160V, IE=0
VEB= -3V, IC=0
VCE=-10V, IC= -1mA
VCE=-10V, IC= -10mA
VCE=-10V, IC= -30mA
IC= -20mA, IB= -2mA
IC= -20mA, IB= -2mA
VCE=-20V, IC= -10mA
f =100MHz
MIN
-200
-200
-5
25
40
25
50
TYP MAX UNIT
V
V
V
-0.25
uA
-0.1
uA
-0.4
V
-0.9
V
MHz
WE* Pulse test: Pulse width≤300µs, Duty cycle≤2%.
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