BC868 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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BC868

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

BC868 TRANSISTOR (NPN)

FEATURES

z High current

z Low voltage

SOT-89-3L

1. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

32

20

5

1

500

150

-55~150

Unit

V

V

V

A

mW

℃

℃

2. COLLECTOR

3. EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC=100μA,IE=0

32

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA,IB=0

20

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

5

Collector cut-off current

ICBO

VCB=25V,IE=0

Emitter cut-off current

IEBO

VEB=5V,IC=0

hFE(1) VCE=1V,IC=500mA

85

DC current gain

hFE(2) VCE=1V,IC=1A

60

hFE(3) VCE=10V,IC=5mA

50

Collector-emitter saturation voltage

VCE(sat) IC=1A,IB=100mA

Base-emitter voltage

VBE1

VBE2

VCE=10V,IC=5mA

VCE=1V,IC=1A

Transition frequency

fT

VCE=5V,IC=10mA,f=100MHz

40

CLASSIFICATION OF hFE(1)

Rank

BC868-10

BC868-16

Range

85-160

100-250

Marking

CBC

CCC

Typ Max Unit

V

V

V

0.1

μA

0.1

μA

375

0.5

V

0.62

V

1

V

MHz

BC868-25

160-375

CDC

www.cj-elec.com

1

C,Nov,2015

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