BC857C データシートの表示（PDF） - Weitron Technology

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BC857C

General Purpose Transistor PNP Silicon

Weitron Technology 

BC856A/B-BC857A/B/C

BC858A/B/C-BC859B/C

WE ITR ON

BC856 Series

VCE= -5.0V

TA= 25 C

2.0

1.0

0.5

0.2

-0.1 -0.2

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200

IC, COLLECTOR CURRENT (AMP)

Figure 7. DC Current Gain

-1.0

TJ=25 C

-0.8

VBE(sat)@IC/IB=10

-0.6

VBE@VCE=-5.0V

-0.4

-0.2

VCE(sat)@IC/IB=10

0

-0.2

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

IC, COLLECTOR CURRENT(mA)

Figure 8. "ON" Voltage

-2.0

-1.6

IC=

-10mA

-1.2

-20mA

-50mA -100mA -200mA

-0.8

-0.4

TJ=25 C

0

-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

40

TJ=25 C

20

Cib

10

8.0

6.0

Cob

4.0

2.0

-0.1 -0.2

-0.5 -1.0 -2.0 -5.0 -10 -20

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

-50 -100

-1.0

-1.4

-1.8

qVB for VBE

-2.2

-55 C to 125 C

-2.6

-3.3

-0.2 -0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100 -200

IC, COLLECTOR CURRENT (mA)

Figure 10. Base-Emitter Temperature Coefficient

VCE=-5.0V

500

200

100

50

20

-1.0

-10

-100

IC, COLLECTOR CURRENT (mA)

Figure 12.Current-Gain-Bandwidth Product

WEITRON

http://www.weitron.com.tw

4/4

Rev A 12-Apr-05

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