BF458 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BF458 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF458; BF459
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
104
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BF458
ICBO
collector cut-off current
BF459
IEBO
hFE
VCEsat
Cc
Cre
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
−
−
50
nA
−
−
5
µA
IE = 0; VCB = 250 V
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 30 mA; VCE = 10 V
IC = 30 mA; IB = 6 mA
−
−
−
−
−
−
26
−
−
−
50
nA
5
µA
100 nA
−
1
V
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
IC = 15 mA; VCE = 10 V; f = 100 MHz −
−
4.5 pF
−
3.5 pF
90
−
MHz
1999 Apr 21
3
Share Link: 