BF458 データシートの表示（PDF） - New Jersey Semiconductor
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BF458 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
104
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwisespecified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
BF458
ICBO
collector cut-off current
BF459
'eso
HFE
VcEsat
Cc
Cre
ft
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 200 V
lEaO;VCB = 200V;Tj=150°C
50
nA
-
-
5
MA
IE ~ 0; VCB = 250 V
|E = 0;VCB = 250V;Tj = 1500C
Ic = 0; VEB = 5 V
lc = 30mA; VCE = 10V
Ic = 30 mA; IB = 6 mA
-
-
-
-
26
-
-
-
50
nA
5
HA
100 nA
-
1
V
lE = ie = 0;VCB = 30V;f=1MHz
-
|c = ic = 0; VCE = 30 V; f = 1 MHz -
lc = 15 mA; VCE = 10 V; f = 100MHz -
-
4.5 PF
-
3.5 PF
90
-
MHz
Quality Semi-Conductors
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