C4399 データシートの表示（PDF） - TY Semiconductor

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C4399

NPN Epitaxial Planar Silicon Transistor

TY Semiconductor 

Product specification

2SC4399

Features

High power gain : PG=25dB typ (f=100MHz).

applied sets to be made small and slim.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

30

V

VCEO

20

V

VEBO

5

V

IC

30

mA

PC

150

mW

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Gain bandwidth product

Reverse transfer capacitance

Base-collector time constant

Power gain

Noise figure

Symbol

Testconditons

ICBO VCB = 10V, IE=0

IEBO VEB = 4V, IC=0

hFE VCE = 6V , IC = 1mA

fT VCE = 6V , IC = 1mA

Cre VCB = 6V, f = 1MHz

rbb'Cc VCB = 6V, IC= 1mA, f = 31.9MHz

PG VCB = 6V, IC= 1mA, f = 100MHz

NF VCB = 6V, IC= 1mA, f = 100MHz

Min Typ Max Unit

0.1 ìA

0.1 ìA

60

270

200 320

MHz

0.9 1.2 pF

12 20 ps

25

dB

3.0

dB

hFE Classification

Marking

Rank

hFE

3

60 120

F

4

90 180

5

135 270

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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