IXFN150N15 データシートの表示（PDF） - IXYS CORPORATION
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IXFN150N15 Datasheet PDF : 2 Pages
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IXFN 150N10
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g
fs
C
iss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Qg(on)
Q
gs
Qgd
RthJC
R
thCK
V = 10 V; I = 60A, Note 2
DS
D
VGS = 0 V, VDS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
RG = 1 W (External),
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
50 75
S
9100
pF
2600
pF
1200
pF
50
ns
60
ns
110
ns
45
ns
360
nC
65
nC
190
nC
0.21 K/W
0.05
K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
IS
VGS = 0
ISM
Repetitive;
pulse width limited by TJM
V
I = 100 A, V = 0 V,
SD
F
GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
150
A
600
A
1.5
V
t
250 ns
rr
Q
RM
I
F
=
50
A,
-di/dt
=
100
A/ms,
V
R
=
50
V
1.1
mC
IRM
13
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
Notes:
1. Pulse width limited by TJM.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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