2SC1815 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC1815 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC1815
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
50
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)EBO IC=0.1mA,IC=0
ICBO
VCB=60V,IE=0
ICEO
VCE=50V,IB=0
IEBO
VEB=5V,IC=0
5
V
0.1 μA
0.1 μA
0.1 μA
DC current gain
VCE=6V,IC=2mA
130
400
hFE
VCE=6V,IC=150mA
25 100
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
0.1 0.25 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=100mA, IB=10mA
VCE=10V, IC= 1mA
fT
f=30MHz
80
1V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
130-200
H
200-400
C019
Rev.A
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