2SC1815 データシートの表示（PDF） - Inchange Semiconductor
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2SC1815 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC1815
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 100mA ; IB= 10mA
ICBO
Emitter Cutoff Current
VCB= 60V; IE= 0
IEBO
Collector Cutoff Current
hFE(1)
DC Current Gain
VEB= 5V; IC= 0
IC= 2mA ; VCE= 6V
hFE(2)
DC Current Gain
IC= 150mA ; VCE= 6V
fT
Current-Gain—Bandwidth Product
IC= 1mA; VCE= 10V;
Cob
Collector Output Capacitance
VCB=10V; IE=0; f=1MHz
Rbb' Base Intrinsic Resistance
NF
Noise Figure
VCE=10V,IE=-1mA;f=30MHz
VCE=6V,IC=0.1mA;f=1KHz,
RG=10KΩ
hFE(1) Classifications
O
Y
GR
BL
70-140 120-400 200-400 350-700
MIN TYP. MAX UNIT
0.25 V
1.0
V
0.1 μA
0.1 μA
70
700
25
80
MHz
3.5 pF
50
Ω
10 dB
isc website：www.iscsemi.com
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