MMBT3906L データシートの表示（PDF） - Unisonic Technologies

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MMBT3906L

GENERAL PURPOSE APPLIATION

Unisonic Technologies 

MMBT3906

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-40

V

Collector Emitter Voltage

VCEO

-40

V

Emitter Base Voltage

VEBO

-5

V

Collector Current

IC

-200

mA

Base Current

IB

-50

mA

Collector Dissipation

PC

350

mW

Junction Temperature

TJ

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector Cut-off Current

ICEX VCE=-30V, VEB=-3V

Base Cut-off Current

IBL

VCE=-30V, VEB=-3V

Collector-Base Breakdown Voltage

VCBO IC=-10μA,IE=0

-40

Collector-Emitter Breakdown Voltage

(Note)

VCEO IC=-1mA, IB=0

-40

Emitter-Base Breakdown Voltage

VEBO IE=-10μA, IC=0

-6

hFE1 VCE=-1V, IC=-0.1mA

60

DC Current Gain (Note)

hFE2 VCE=-1V, IC=-1mA

80

hFE3 VCE=-1V, IC=-10mA

100

hFE4 VCE=-1V, IC=-50mA

60

hFE5 VCE=-1V, IC=-100mA

30

Collector-Emitter Saturation Voltage (Note) VCE(SAT)1 IC=-10mA, IB=-1mA

VCE(SAT)2 IC=-50mA, IB=-5mA

Base-Emitter Saturation Voltage

VBE(SAT)1 IC=-10mA, IB=-1mA

VBE(SAT)2 IC=-50mA, IB=-5mA

-0.65

Transition Voltage

fT

VCE=-20V, IC=-10mA, f=100MHz 250

Output Capacitance

Cob VCB=-5V,IE=0, f=1MHz

Turn on Time

tON

VCC=-3V, VBE=-0.5V, IC=-10mA,

IB1=-1mA

Turn off Time

tOFF

Note: Pulse test: PW≦300μs, Duty Cycle≦2%

IB1=1B2=-1mA

TYP

MAX UNIT

-50 nA

-50 nA

V

V

V

300

-0.25

-0.4

-0.85

-0.95

4.5

V

V

V

V

MHz

pF

70 ns

300 ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-013.D

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