SMBT3906(2003) データシートの表示（PDF） - Infineon Technologies

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SMBT3906
(Rev.:2003)

PNP Silicon Switching Transistors

Infineon Technologies 

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 20 V, f = 100 MHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Short-circuit input impedance

IC = 1 mA, VCE = 10 V, f = 1 kHz

Open-circuit reverse voltage transf. ratio

IC = 1 mA, VCE = 10 V, f = 1 kHz

Short-circuit forward current transf. ratio

IC = 1 mA, VCE = 10 V, f = 1 kHz

Open-circuit output admittance

IC = 1 mA, VCE = 10 V, f = 1 kHz

Delay time

VCC = 3 V, IC = 10 mA, IB1 = 1 mA,

VBE(off) = 0.5 V

Rise time

VCC = 3 V, IC = 10 mA, IB1 = 1 mA,

VBE(off) = 0.5 V

Storage time

VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA

Fall time

VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA

Noise figure

IC = 100 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 1 kΩ

SMBT3906/ MMBT3906

fT

Ccb

Ceb

h11e

h12e

h21e

h22e

td

250 -

- MHz

-

-

4.5 pF

-

-

10

2

-

12 kΩ

0.1

-

10 10-4

100

-

400 -

3

-

60 µS

-

-

35 ns

tr

-

-

35

tstg

-

- 225

tf

-

-

75

F

-

-

4 dB

3

Jul-28-2003

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