MMBT3906(2003) データシートの表示（PDF） - Infineon Technologies

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MMBT3906
(Rev.:2003)

PNP Silicon Switching Transistors

Infineon Technologies 

SMBT3906/ MMBT3906

PNP Silicon Switching Transistor

3

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• Complementary type:

SMBT3904/ MMBT3904 (NPN)

2

1 VPS05161

Type

Marking

SMBT3906/ MMBT3906 s2A

Pin Configuration

1=B 2=E 3=C

Package

SOT23

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-base voltage

VCEO

VCBO

Emitter-base voltage

Collector current

VEBO

IC

Total power dissipation-

Ptot

TS = 71 °C

Junction temperature

Tj

Storage temperature

Tstg

Thermal Resistance

Parameter

Junction - soldering point1)

Symbol

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

Value

40

40

5

200

330

150

-65 ... 150

Value

≤240

Unit

V

mA

mW

°C

Unit

K/W

1

Jul-28-2003

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