SST39VF1601 データシートの表示（PDF） - Silicon Storage Technology
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SST39VF1601 Datasheet PDF : 31 Pages
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16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
Data Sheet
TABLE 7: CFI Query Identification String1 for SST39VF160x/320x
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Data
0051H
0052H
0059H
0001H
0007H
0000H
0000H
0000H
0000H
0000H
0000H
Data
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
1. Refer to CFI publication 100 for more details.
T7.1 1223
TABLE 8: System Interface Information for SST39VF160x/320x
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0003H
0000H
0004H
0005H
0001H
0000H
0001H
0001H
Data
VDD Min (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
VPP min. (00H = no VPP pin)
VPP max. (00H = no VPP pin)
Typical time out for Word-Program 2N µs (23 = 8 µs)
Typical time out for min. size buffer program 2N µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
Typical time out for Chip-Erase 2N ms (25 = 32 ms)
Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs)
Maximum time out for buffer program 2N times typical
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)
TABLE 9: Device Geometry Information for SST39VF1601/1602
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0001H
0010H
0000H
001FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (15H = 21; 221 = 2 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FF = 511
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T8.3 1223
T9.0 1223
©2008 Silicon Storage Technology, Inc.
10
S71223-05-000
6/08
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