BCX68 データシートの表示（PDF） - Siemens AG

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BCX68

NPN Silicon AF Transistors

Siemens AG 

BCX 68

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 30 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 1 µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

Emitter cutoff current

VEB = 5 V

DC current gain1)

IC = 5 mA, VCE = 10 V

IC = 500 mA, VCE = 1 V

IC = 1 A, VCE = 1 V

BCX 68

BCX 68-10

BCX 68-16

BCX 68-25

Collector-emitter saturation voltage1)

IC = 1 A, IB = 100 mA

Base-emitter voltage1)

IC = 5 mA, VCE = 10 V

IC = 1 A, VCE = 1 V

AC characteristics

Transition frequency

IC = 100 mA, VCE = 5 V, f = 20 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 20

–

–

V

V(BR)CB0 25

–

–

V(BR)EB0 5

–

–

ICB0

–

–

100 nA

–

–

100 µA

IEB0

–

–

10

µA

hFE

VCEsat

–

50

–

–

85

–

375

85

100 160

100 160 250

160 250 375

60

–

–

–

–

0.5 V

VBE

–

0.6 –

–

–

1

fT

–

100 –

MHz

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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