BAW56WT1G_10 データシートの表示（PDF） - ON Semiconductor

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BAW56WT1G_10

Dual Switching Diode, Common Anode

ON Semiconductor 

BAW56WT1G

Dual Switching Diode,

Common Anode

Features

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25C)

Rating

Symbol Max Unit

Reverse Voltage

VR

70

V

Forward Current

IF

200

mA

Peak Forward Surge Current

IFM(surge) 500

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS (TA = 25C)

Characteristic

Symbol Max Unit

Total Device Dissipation FR-- 5 Board

(Note 1)

TA = 25C

Derate above 25C

PD

200

mW

1.6 mW/C

Thermal Resistance, Junction--to--Ambient

Total Device Dissipation

Alumina Substrate (Note 2) TA = 25C

Derate above 25C

RθJA

PD

625

C/W

300

mW

2.4 mW/C

Thermal Resistance, Junction--to--Ambient

Junction and Storage Temperature

RθJA

TJ, Tstg

417

-- 55 to

+150

C/W

C

1. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.

2. Alumina = 0.4 ¢ 0.3 ¢ 0.024 in. 99.5% alumina.

http://onsemi.com

ANODE

3

CATHODE

1

2

CATHODE

MARKING

DIAGRAM

3

1

2

SC--70

CASE 419

STYLE 4

A1 M G

G

1

A1 = Device Code

M = Date Code*

G = Pb--Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device

Package

Shipping†

BAW56WT1G SC--70

(Pb--Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2010

1

October, 2010 -- Rev. 6

Publication Order Number:

BAW56WT1/D

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